Formation of copper porous structures under near-equilibrium chemical vapor deposition
نویسندگان
چکیده
منابع مشابه
Selectivity in copper chemical vapor deposition
The fundamental surface chemistry underlying selectivity in copper chemical vapor deposition (CVD) from COD-Cu-hfac and Cu(hfac), has been determined. Both electronic and chemistry contributions strongly influence the precursor reactivity on oxide as compared to metal surfaces. These results have important implications regarding the role of surface preparation and cleaning for initiating and ma...
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TING FUNG CHUNG∗,‡, TIAN SHEN∗, HELIN CAO∗,‡, LUIS A. JAUREGUI†,‡, WEI WU§, QINGKAI YU¶, DAVID NEWELL‖ and YONG P. CHEN∗,†,‡,∗∗ ∗Department of Physics, West Lafayette, Indiana 47907, USA †School of Electrical and Computer Engineering, West Lafayette, Indiana 47907, USA ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA §Department of Electrical and Computer Engi...
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When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monatomic layers, such models describe the evolution of atomic coverage due to the combined effect of reaction terms representing adsorption-desorption and chemical processes and nonline...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2016
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2016.02.033